Variance-aware weight quantization of multi-level resistive switching devices based on Pt/LaAlO<sub>3</sub>/SrTiO<sub>3</sub> heterostructuresopen access
- Authors
- Lee, Sunwoo; Jeon, Jaeyoung; Eom, Kitae; Jeong, Chaehwa; Yang, Yongsoo; Park, Ji-Yong; Eom, Chang-Beom; Lee, Hyungwoo
- Issue Date
- May-2022
- Publisher
- NATURE PORTFOLIO
- Citation
- SCIENTIFIC REPORTS, v.12, no.1
- Journal Title
- SCIENTIFIC REPORTS
- Volume
- 12
- Number
- 1
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/89530
- DOI
- 10.1038/s41598-022-13121-4
- ISSN
- 2045-2322
- Abstract
- Resistive switching devices have been regarded as a promising candidate of multi-bit memristors for synaptic applications. The key functionality of the memristors is to realize multiple non-volatile conductance states with high precision. However, the variation of device conductance inevitably causes the state-overlap issue, limiting the number of available states. The insufficient number of states and the resultant inaccurate weight quantization are bottlenecks in developing practical memristors. Herein, we demonstrate a resistive switching device based on Pt/LaAlO3/SrTiO3 (Pt/LAO/STO) heterostructures, which is suitable for multi-level memristive applications. By redistributing the surface oxygen vacancies, we precisely control the tunneling of two-dimensional electron gas (2DEG) through the ultrathin LAO barrier, achieving multiple and tunable conductance states (over 27) in a non-volatile way. To further improve the multi-level switching performance, we propose a variance-aware weight quantization (VAQ) method. Our simulation studies verify that the VAQ effectively reduces the state-overlap issue of the resistive switching device. We also find that the VAQ states can better represent the normal-like data distribution and, thus, significantly improve the computing accuracy of the device. Our results provide valuable insight into developing high-precision multi-bit memristors based on complex oxide heterostructures for neuromorphic applications.
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