Oxide Two-Dimensional Electron Gas with High Mobility at Room-Temperature
DC Field | Value | Language |
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dc.contributor.author | Eom, Kitae | - |
dc.contributor.author | Paik, Hanjong | - |
dc.contributor.author | Seo, Jinsol | - |
dc.contributor.author | Campbell, Neil | - |
dc.contributor.author | Tsymbal, Evgeny Y. | - |
dc.contributor.author | Oh, Sang Ho | - |
dc.contributor.author | Rzchowski, Mark S. | - |
dc.contributor.author | Schlom, Darrell G. | - |
dc.contributor.author | Eom, Chang-Beom | - |
dc.date.accessioned | 2023-12-15T15:09:12Z | - |
dc.date.available | 2023-12-15T15:09:12Z | - |
dc.date.issued | 2022-04 | - |
dc.identifier.issn | 2198-3844 | - |
dc.identifier.issn | 2198-3844 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/89531 | - |
dc.description.abstract | The prospect of 2-dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide-bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high-electron mobility transistors. Nonetheless only a small number of studies to date report 2DEGs in BaSnO3-based heterostructures. Here, 2DEG formation at the LaScO3/BaSnO3 (LSO/BSO) interface with a room-temperature mobility of 60 cm(2) V-1 s(-1) at a carrier concentration of 1.7 x 10(13) cm(-2) is reported. This is an order of magnitude higher mobility at room temperature than achieved in SrTiO3-based 2DEGs. This is achieved by combining a thick BSO buffer layer with an ex situ high-temperature treatment, which not only reduces the dislocation density but also produces a SnO2-terminated atomically flat surface, followed by the growth of an overlying BSO/LSO interface. Using weak beam dark-field transmission electron microscopy imaging and in-line electron holography technique, a reduction of the threading dislocation density is revealed, and direct evidence for the spatial confinement of a 2DEG at the BSO/LSO interface is provided. This work opens a new pathway to explore the exciting physics of stannate-based 2DEGs at application-relevant temperatures for oxide nanoelectronics. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | WILEY | - |
dc.title | Oxide Two-Dimensional Electron Gas with High Mobility at Room-Temperature | - |
dc.type | Article | - |
dc.identifier.wosid | 000758922600001 | - |
dc.identifier.doi | 10.1002/advs.202105652 | - |
dc.identifier.bibliographicCitation | ADVANCED SCIENCE, v.9, no.12 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.scopusid | 2-s2.0-85124877288 | - |
dc.citation.title | ADVANCED SCIENCE | - |
dc.citation.volume | 9 | - |
dc.citation.number | 12 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | 2-dimensional electron gas | - |
dc.subject.keywordAuthor | room temperature high mobility | - |
dc.subject.keywordAuthor | transparent conducting oxide | - |
dc.subject.keywordAuthor | alkaline-earth stannate | - |
dc.subject.keywordPlus | DIELECTRIC-PROPERTIES | - |
dc.subject.keywordPlus | EDGE DISLOCATIONS | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | BASNO3 | - |
dc.subject.keywordPlus | CHARGE | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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