Oxide Two-Dimensional Electron Gas with High Mobility at Room-Temperature

Abstract

The prospect of 2-dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide-bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high-electron mobility transistors. Nonetheless only a small number of studies to date report 2DEGs in BaSnO3-based heterostructures. Here, 2DEG formation at the LaScO3/BaSnO3 (LSO/BSO) interface with a room-temperature mobility of 60 cm(2) V-1 s(-1) at a carrier concentration of 1.7 x 10(13) cm(-2) is reported. This is an order of magnitude higher mobility at room temperature than achieved in SrTiO3-based 2DEGs. This is achieved by combining a thick BSO buffer layer with an ex situ high-temperature treatment, which not only reduces the dislocation density but also produces a SnO2-terminated atomically flat surface, followed by the growth of an overlying BSO/LSO interface. Using weak beam dark-field transmission electron microscopy imaging and in-line electron holography technique, a reduction of the threading dislocation density is revealed, and direct evidence for the spatial confinement of a 2DEG at the BSO/LSO interface is provided. This work opens a new pathway to explore the exciting physics of stannate-based 2DEGs at application-relevant temperatures for oxide nanoelectronics.