Nanoscale control of LaAlO3/SrTiO3 metal-insulator transition using ultra-low-voltage electron-beam lithography
DC Field | Value | Language |
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dc.contributor.author | Yang, Dengyu | - |
dc.contributor.author | Hao, Shan | - |
dc.contributor.author | Chen, Jun | - |
dc.contributor.author | Guo, Qing | - |
dc.contributor.author | Yu, Muqing | - |
dc.contributor.author | Hu, Yang | - |
dc.contributor.author | Eom, Kitae | - |
dc.contributor.author | Lee, Jung-Woo | - |
dc.contributor.author | Eom, Chang-Beom | - |
dc.contributor.author | Irvin, Patrick | - |
dc.contributor.author | Levy, Jeremy | - |
dc.date.accessioned | 2023-12-15T15:09:19Z | - |
dc.date.available | 2023-12-15T15:09:19Z | - |
dc.date.issued | 2020-12 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.issn | 1077-3118 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/89539 | - |
dc.description.abstract | We describe a method to control the insulator-metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography. Compared to previous reports that utilize conductive atomic force microscope (c-AFM) lithography, this approach can provide comparable resolution (similar to 10nm) at write speeds (10mm/s) that are up to 10000x faster than c-AFM. The writing technique is nondestructive, and the conductive state is reversible via prolonged exposure to air. Transport properties of representative devices are measured at milli-Kelvin temperatures, where superconducting behavior is observed. We also demonstrate the ability to create conducting devices on graphene/LaAlO3/SrTiO3 heterostructures. The underlying mechanism is believed to be closely related to the same mechanism regulating c-AFM-based methods. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Nanoscale control of LaAlO3/SrTiO3 metal-insulator transition using ultra-low-voltage electron-beam lithography | - |
dc.type | Article | - |
dc.identifier.wosid | 000603065000003 | - |
dc.identifier.doi | 10.1063/5.0027480 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.117, no.25 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.scopusid | 2-s2.0-85099252356 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 117 | - |
dc.citation.number | 25 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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