AC Electrical Conduction of Cr-Doped SrTiO3 Thin Films with an Oxygen-Deficient Interface Layer
DC Field | Value | Language |
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dc.contributor.author | Bach Thang Phan | - |
dc.contributor.author | Eom, Ki Tae | - |
dc.contributor.author | Lee, Jaichan | - |
dc.date.accessioned | 2023-12-15T15:09:23Z | - |
dc.date.available | 2023-12-15T15:09:23Z | - |
dc.date.issued | 2017-06 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.issn | 1543-186X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/89545 | - |
dc.description.abstract | The ac electrical conduction of Cr-doped SrTiO3 thin films with an oxygen-deficient interface layer was investigated as a function of temperature and frequency. The Cr-doped SrTiO3 (Cr-STO) thin films with an ultra-thin (similar to 2 nm) oxygen-deficient layer inserted between the top electrode and the Cr-STO layer exhibited two ac conduction mechanisms, i.e., variable-range hopping and small-polaron hopping conduction, accompanied by a relaxation process. Since high oxygen deficiency induces large lattice distortion in the depletion layer, the first relaxation process occurs at low frequencies in the thin oxygen depletion layer Cr-SrTiO3-delta , and the corresponding conduction behavior follows the small-polaron tunneling model. In the high frequency range, an additional relaxation process is involved and is associated with the variable-range hopping between the localized states in the band gap of the thick Cr-SrTiO3 layer. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | SPRINGER | - |
dc.title | AC Electrical Conduction of Cr-Doped SrTiO3 Thin Films with an Oxygen-Deficient Interface Layer | - |
dc.type | Article | - |
dc.identifier.wosid | 000400560400075 | - |
dc.identifier.doi | 10.1007/s11664-016-5243-5 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTRONIC MATERIALS, v.46, no.6, pp 3796 - 3800 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85028267485 | - |
dc.citation.endPage | 3800 | - |
dc.citation.startPage | 3796 | - |
dc.citation.title | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.volume | 46 | - |
dc.citation.number | 6 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Resistive switching | - |
dc.subject.keywordAuthor | polaron hopping conduction | - |
dc.subject.keywordAuthor | variable-range hopping | - |
dc.subject.keywordPlus | OXIDE-FILMS | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | MEMORY | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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