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AC Electrical Conduction of Cr-Doped SrTiO3 Thin Films with an Oxygen-Deficient Interface Layer

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dc.contributor.authorBach Thang Phan-
dc.contributor.authorEom, Ki Tae-
dc.contributor.authorLee, Jaichan-
dc.date.accessioned2023-12-15T15:09:23Z-
dc.date.available2023-12-15T15:09:23Z-
dc.date.issued2017-06-
dc.identifier.issn0361-5235-
dc.identifier.issn1543-186X-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/89545-
dc.description.abstractThe ac electrical conduction of Cr-doped SrTiO3 thin films with an oxygen-deficient interface layer was investigated as a function of temperature and frequency. The Cr-doped SrTiO3 (Cr-STO) thin films with an ultra-thin (similar to 2 nm) oxygen-deficient layer inserted between the top electrode and the Cr-STO layer exhibited two ac conduction mechanisms, i.e., variable-range hopping and small-polaron hopping conduction, accompanied by a relaxation process. Since high oxygen deficiency induces large lattice distortion in the depletion layer, the first relaxation process occurs at low frequencies in the thin oxygen depletion layer Cr-SrTiO3-delta , and the corresponding conduction behavior follows the small-polaron tunneling model. In the high frequency range, an additional relaxation process is involved and is associated with the variable-range hopping between the localized states in the band gap of the thick Cr-SrTiO3 layer.-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherSPRINGER-
dc.titleAC Electrical Conduction of Cr-Doped SrTiO3 Thin Films with an Oxygen-Deficient Interface Layer-
dc.typeArticle-
dc.identifier.wosid000400560400075-
dc.identifier.doi10.1007/s11664-016-5243-5-
dc.identifier.bibliographicCitationJOURNAL OF ELECTRONIC MATERIALS, v.46, no.6, pp 3796 - 3800-
dc.description.isOpenAccessN-
dc.identifier.scopusid2-s2.0-85028267485-
dc.citation.endPage3800-
dc.citation.startPage3796-
dc.citation.titleJOURNAL OF ELECTRONIC MATERIALS-
dc.citation.volume46-
dc.citation.number6-
dc.type.docTypeArticle-
dc.publisher.location미국-
dc.subject.keywordAuthorResistive switching-
dc.subject.keywordAuthorpolaron hopping conduction-
dc.subject.keywordAuthorvariable-range hopping-
dc.subject.keywordPlusOXIDE-FILMS-
dc.subject.keywordPlusRESISTANCE-
dc.subject.keywordPlusMEMORY-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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반도체대학 (반도체·전자공학부)
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