Electrically Erasable Wide-Bandgap Charge-Trap Memory With an Electric-Flux-Modulating Counter Electrode
- Authors
- Kim, Hayoung; Boampong, Amos A.; Kim, Chang-Hyun; Kim, Min-Hoi
- Issue Date
- Nov-2023
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Charge-trap memory; counter electrode; electric flux; potential distribution; wide-bandgap
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.44, no.11, pp 1841 - 1844
- Pages
- 4
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 44
- Number
- 11
- Start Page
- 1841
- End Page
- 1844
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/89570
- DOI
- 10.1109/LED.2023.3314074
- ISSN
- 0741-3106
1558-0563
- Abstract
- An effective electrical erasing operation in the charge-trap memory (CTM) based on wide bandgap (WBG) semiconductors is demonstrated by realizing an electric flux-modulating counter electrode (EFMCE). A fundamental limitation of gate-bias erasing operation in WBG CTMs is overcome by depositing a top Al metal electrode on the bottom-gate top-contact thin-film transistor memories. The function of EFMCE is both experimentally and theoretically investigated through device fabrications and finite-element numerical simulation. Both pentacene-and In-Ga-Zn oxide based CTMs incorporating the EFMCE show repeatable and stable electrical programming and erasing. The proposed concept of EFMCE therefore improves the applicability of WBG semiconductors in future memory technologies.
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