Effect of Tunable Sub-Source and Sub-Drain Device Behavior in Four-Terminal Operation Using Metal-Capping Thin-Film Transistors
- Authors
- Lee, Ji Ye; Ju, Byeong-Kwon; Lee, Sang Yeol
- Issue Date
- Oct-2023
- Publisher
- AMER CHEMICAL SOC
- Keywords
- amorphous oxide semiconductors; a-SiZnSnO; thin-film transistor; metal capping layer; sub-source
- Citation
- ACS APPLIED ELECTRONIC MATERIALS, v.5, no.11, pp 6189 - 6196
- Pages
- 8
- Journal Title
- ACS APPLIED ELECTRONIC MATERIALS
- Volume
- 5
- Number
- 11
- Start Page
- 6189
- End Page
- 6196
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/89669
- DOI
- 10.1021/acsaelm.3c01105
- ISSN
- 2637-6113
2637-6113
- Abstract
- We report on a metal-capping (MC) structure with threshold voltage (V-th) tunability via four-terminal driving. Amorphous oxide semiconductors (AOSs) are emerging as promising next-generation semiconductor materials due to their remarkable properties, such as high field-effect mobility, uniformity, and excellent transmittance in the visible light region. The MC structure is a simple structure that can improve the characteristics of a thin-film transistor (TFTs) based on AOSs. By applying additional voltage to this MC layer, we were able to control the amount and direction of carrier flow during the I-V operation. With the four-terminal drive, the V-th of the MC TFT can be modulated according to the voltage applied to the MC layer. When a negative voltage is applied to the MC layer, the V-th shifts to the negative region, and when a positive voltage is applied, the V-th shifts to the positive region. With the four-terminal MC TFT, we expect to be able to compensate for V-th modulated by external stresses that significantly affect the display pixels. Furthermore, it is expected that this operating principle can be utilized in many application systems, such as sensors.
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