Vertical asymmetric metal-semiconductor-metal photodiode based on β-Ga2O3 thin films fabricated via solution process for arc discharge detection
DC Field | Value | Language |
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dc.contributor.author | Choi, Wangmyung | - |
dc.contributor.author | Park, Taehyun | - |
dc.contributor.author | Yoo, Hocheon | - |
dc.contributor.author | Hur, Jaehyun | - |
dc.date.accessioned | 2024-01-17T00:01:24Z | - |
dc.date.available | 2024-01-17T00:01:24Z | - |
dc.date.issued | 2023-08 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.issn | 1873-4669 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/90142 | - |
dc.description.abstract | Arc discharge detection is a preeminent strategy for diagnosing aging of high-power electric equipment. Therefore, the timely detection of arc discharge can prevent immense disasters, such as massive fire ac-cidents. Ultraviolet C (UVC) photodetectors (PD) are effective devices for optical arc discharge detection because of their solar blindness, which enables noise-free and highly selective arc discharge detection. In this study, we developed a solution-processed beta-Ga2O3-based vertical asymmetric metal-semiconductor-metal (MSM) UVC PD as a high-performance and inexpensive UVC detector. The high bandgap of photo-active beta-Ga2O3 (4.7-5.1 eV) enables selective UVC detection. The Schottky barrier heights at two different metal-semiconductor junctions (PEDOT:PSS/beta-Ga2O3 and ITO/beta-Ga2O3) were systematically modulated by varying the beta-Ga2O3 film annealing temperature and thickness, which enabled fast photoresponse and self-powered operation, as demonstrated by various optical and electrical analyses. The optimized device ex-hibited a fast photoresponse (rise/fall time of 67/53 ms) and high responsivity (41 mA W-1) and detectivity (1.5x1011 Jones) in self-powered mode. The instantaneous arc discharge was successfully detected using the beta-Ga2O3 based vertical MSM PD, demonstrating its feasibility for arc discharge detection. Thus, this study provides new insights into inexpensive self-powered PDs that can be implemented for the facile and prompt monitoring of aging electric equipment and prevention of potential fire accidents.(c) 2023 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Vertical asymmetric metal-semiconductor-metal photodiode based on β-Ga2O3 thin films fabricated via solution process for arc discharge detection | - |
dc.type | Article | - |
dc.identifier.wosid | 001134814900001 | - |
dc.identifier.doi | 10.1016/j.jallcom.2023.170169 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.953 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85152669093 | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 953 | - |
dc.type.docType | Article | - |
dc.publisher.location | 스위스 | - |
dc.subject.keywordAuthor | Vertical MSM structure | - |
dc.subject.keywordAuthor | Asymmetric Schottky junctions | - |
dc.subject.keywordAuthor | Self-powered operation | - |
dc.subject.keywordAuthor | Arc discharge detection | - |
dc.subject.keywordPlus | SOLAR-BLIND PHOTODETECTOR | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | STATES | - |
dc.subject.keywordPlus | PAIR | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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