Bridge Transistors: A Study of Bridging Effects and Early Saturation Behaviors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Seongjae | - |
dc.contributor.author | Lee, Subin | - |
dc.contributor.author | Kim, Chang-Hyun | - |
dc.contributor.author | Yoo, Hocheon | - |
dc.date.accessioned | 2024-02-08T02:30:21Z | - |
dc.date.available | 2024-02-08T02:30:21Z | - |
dc.date.issued | 2024-01 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.issn | 1557-9646 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/90323 | - |
dc.description.abstract | This brief proposes the use of a bridge transistor as a means of achieving early saturation characteristics of drain current. To investigate the electrical properties of the bridge transistor, we introduce materials capable of forming homojunction 2,7-Dioctyl1benzothieno3,2-b1 benzothiophene (C8-BTBT), heterojunction dinaphtho2,3-b:2',3'-fthieno3,2 -bthiophene (DNTT), and Schottky junction (Au) as bridge layers, along with the C8-BTBT-based channel. Our findings reveal early saturation characteristics of drain current in bridge transistors with Schottky junction. Through contact resistance extraction and 2-D numerical simulation, we suggest that the early current saturation behavior is due to the additional contact resistance and depletion region. | - |
dc.format.extent | 3 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Bridge Transistors: A Study of Bridging Effects and Early Saturation Behaviors | - |
dc.type | Article | - |
dc.identifier.wosid | 001106585700001 | - |
dc.identifier.doi | 10.1109/TED.2023.3330454 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.1, pp 759 - 761 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85177033362 | - |
dc.citation.endPage | 761 | - |
dc.citation.startPage | 759 | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 71 | - |
dc.citation.number | 1 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Bridge transistors | - |
dc.subject.keywordAuthor | contact resistance | - |
dc.subject.keywordAuthor | organic semiconductors | - |
dc.subject.keywordAuthor | saturation voltage (V (Sat)) | - |
dc.subject.keywordAuthor | thin-film transistors (TFTs) | - |
dc.subject.keywordPlus | FILM | - |
dc.subject.keywordPlus | GAIN | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea(13120)031-750-5114
COPYRIGHT 2020 Gachon University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.