Temperature-Dependent Phase Transition in WS2 for Reinforcing Band-to-Band Tunneling and Photoreactive Random Access Memory Application
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Woo, Gunhoo | - |
dc.contributor.author | Cho, Jinill | - |
dc.contributor.author | Yeom, Heejung | - |
dc.contributor.author | Yoon, Min Young | - |
dc.contributor.author | Eom, Geon Woong | - |
dc.contributor.author | Kim, Muyoung | - |
dc.contributor.author | Mun, Jihun | - |
dc.contributor.author | Lee, Hyo Chang | - |
dc.contributor.author | Kim, Hyeong-U | - |
dc.contributor.author | Yoo, Hocheon | - |
dc.contributor.author | Kim, Taesung | - |
dc.date.accessioned | 2024-02-19T02:30:22Z | - |
dc.date.available | 2024-02-19T02:30:22Z | - |
dc.date.issued | 2024-02 | - |
dc.identifier.issn | 2688-4046 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/90476 | - |
dc.description.abstract | In the era of big data, negative differential resistance (NDR) devices have attracted significant attention as a means of handling massive amounts of information. While 2D materials have been used to achieve NDR behavior, their intrinsic material characteristics have produced limited performance improvements. In this article, a facile phase modification method is presented via a plasma-assisted sulfidation process to synthesize multiphased WS2 thin films, including distorted 1 T (D-1 T) phase and 2 H phases for photoreactive NDR devices with p-Si. The D-1 T phase offers a feasible route to achieve high-performance NDR devices with excellent stability and semimetallic properties. A comprehensive investigation of experimental and computational analyses elucidates the phase transition mechanism with various temperatures and electrical properties of D-1 T WS2. In addition, optimizing electron tunneling in the multiple-phased tungsten disulfide (MP-WS2)/p-Si heterojunction at MP-WS2 with 77.4% D-1 T phase results in superior NDR performance with a peak-to-valley current ratio of 13.8 and reliable photoreactive random-access memory. This unique phase engineering process via plasma-assisted sulfidation provides a pioneering perspective in functionalization and reliability for next-generation nanoelectronics. © 2023 The Authors. Small Science published by Wiley-VCH GmbH. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | John Wiley and Sons Inc | - |
dc.title | Temperature-Dependent Phase Transition in WS2 for Reinforcing Band-to-Band Tunneling and Photoreactive Random Access Memory Application | - |
dc.type | Article | - |
dc.identifier.wosid | 001108034000001 | - |
dc.identifier.doi | 10.1002/smsc.202300202 | - |
dc.identifier.bibliographicCitation | Small Science, v.4, no.2 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.scopusid | 2-s2.0-85177199646 | - |
dc.citation.title | Small Science | - |
dc.citation.volume | 4 | - |
dc.citation.number | 2 | - |
dc.type.docType | Article; Early Access | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | negative differential resistances | - |
dc.subject.keywordAuthor | optoelectrical devices | - |
dc.subject.keywordAuthor | phase modulations | - |
dc.subject.keywordAuthor | plasma-enhanced chemical vapor depositions | - |
dc.subject.keywordAuthor | random-access memories | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | esci | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea(13120)031-750-5114
COPYRIGHT 2020 Gachon University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.