Light-Triggerable and Gate-Tunable Negative Differential Resistance in Small Molecules Heterojunction
DC Field | Value | Language |
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dc.contributor.author | Kim, Seongjae | - |
dc.contributor.author | Jeon, Yunchae | - |
dc.contributor.author | Lee, Eun Kwang | - |
dc.contributor.author | Kim, Yeong Jae | - |
dc.contributor.author | Kim, Chang-Hyun | - |
dc.contributor.author | Yoo, Hocheon | - |
dc.date.accessioned | 2024-03-10T03:01:31Z | - |
dc.date.available | 2024-03-10T03:01:31Z | - |
dc.date.issued | 2024-02 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.issn | 1530-6992 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/90629 | - |
dc.description.abstract | Negative differential resistance (NDR), a phenomenon in which the current decreases when the applied voltage is increased, is attracting attention as a unique electrical property. Here, we propose a broad spectral photo/gate cotunable channel switching NDR (CS-NDR) device. The proposed CS-NDR device has superior linear gate-tunable NDR behavior and highly reproducible properties compared to the previously reported NDR devices, as the fundamental mechanism of the CS-NDR device is directly related to a charge transport channel switching by the linear increase of the applied drain voltage. We also experimentally demonstrate that the photoinduced NDR behavior of the CS-NDR device was derived from the grain boundaries of dinaphtho[2;3-b:2' ,3' -f]-thieno[3,2-b]thiophene. Furthermore, this work produces a 9 x 9 CS-NDR device array composed of 81 devices, providing the reproducibility and uniformity of the CS-NDR device. Finally, we successfully demonstrate the detection of text images with 81 CS-NDR devices using the proposed photo/gate cotunable NDR behavior. | - |
dc.format.extent | 8 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Light-Triggerable and Gate-Tunable Negative Differential Resistance in Small Molecules Heterojunction | - |
dc.type | Article | - |
dc.identifier.wosid | 001158987800001 | - |
dc.identifier.doi | 10.1021/acs.nanolett.3c04671 | - |
dc.identifier.bibliographicCitation | NANO LETTERS, v.24, no.6, pp 2025 - 2032 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85184796101 | - |
dc.citation.endPage | 2032 | - |
dc.citation.startPage | 2025 | - |
dc.citation.title | NANO LETTERS | - |
dc.citation.volume | 24 | - |
dc.citation.number | 6 | - |
dc.type.docType | Article; Early Access | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Negative differential resistance | - |
dc.subject.keywordAuthor | heterostructure | - |
dc.subject.keywordAuthor | organic semiconductors | - |
dc.subject.keywordAuthor | grain boundary | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | CIRCUIT | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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