Unleashing the Power of Quantum Dots: Emerging Applications from Deep-Ultraviolet Photodetectors for Brighter Futures

Abstract

Since their discovery in 1981, quantum dots (QDs) have been the center of attention in optoelectronic fields owing to their excellent properties such as clearly discrete band structure, high luminous efficiency, and tunable energy bandgap via dot size control. Among them, the bandgap increase characteristic based on the quantum confinement effect opens a new horizon in the field of deep ultraviolet photodetectors (DUV PDs). Emerging applications such as risk monitoring, wireless optical communication, and chemical sensing with extremely low environmental interference raise the significance of DUV PDs. Nonetheless, the limited material selection for DUV absorption has been the main obstacle for further applications. Along this line, this review systematically revisits the recent advances in QD-based DUV PDs, using bandgap-widened QDs, with a focus on the synthetic method, device architecture, and interactions among constituent components. Various QDs categorized into carbon, oxide, sulfide, and nitride are reviewed with the specific characteristics of each substance. The future prospects of QD-based DUV PDs in terms of practical applications and the current challenges are discussed. The increasing significance of DUV PD is driven by emerging applications such as risk monitoring, wireless optical communication, low-interference chemical detection, and fingerprint recognition. However, the restricted availability of materials for DUV absorption hinders its expansion. To overcome this challenge, ultra-wide bandgap QDs employing quantum confinement effects present a promising strategy for advancing DUV PD.image