Work function effect of metal electrodes on the performance of amorphous Si-Zn-Sn-O thin-film transistors investigated by transmission line method
DC Field | Value | Language |
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dc.contributor.author | Kim, Ji Won | - |
dc.contributor.author | Lee, Sang Yeol | - |
dc.date.accessioned | 2024-05-09T15:00:20Z | - |
dc.date.available | 2024-05-09T15:00:20Z | - |
dc.date.issued | 2024-03 | - |
dc.identifier.issn | 0957-4522 | - |
dc.identifier.issn | 1573-482X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/91156 | - |
dc.description.abstract | The electrical performance of amorphous Si-Zn-Sn-O (a-SZTO) thin-film transistors (TFTs) with various source/drain (S/D) electrodes materials was studied. Total resistance (RT) and contact resistance (RC) of a-SZTO TFT fabricated with different electrodes, such as Ag, Al, and Ti, were extracted using the transmission line method (TLM) method. Among the various source/drain metal electrodes, Ti S/D electrodes exhibited superior electrical characteristics and contact characteristics between the channel layer and S/D electrodes compared to other electrode materials, as Ti S/D electrodes form ohmic contacts between S/D electrodes and channel layer interfaces. The a-SZTO TFT with Ti S/D electrodes demonstrated improved electrical characteristics, including field-effect mobility (mu FE) of 19.21 cm2/V s and subthreshold swing (S.S) of 0.64 V/decade. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | SPRINGER | - |
dc.title | Work function effect of metal electrodes on the performance of amorphous Si-Zn-Sn-O thin-film transistors investigated by transmission line method | - |
dc.type | Article | - |
dc.identifier.wosid | 001195416900001 | - |
dc.identifier.doi | 10.1007/s10854-024-12397-8 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.35, no.9 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85188958180 | - |
dc.citation.title | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | - |
dc.citation.volume | 35 | - |
dc.citation.number | 9 | - |
dc.type.docType | Article | - |
dc.publisher.location | 네델란드 | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE FABRICATION | - |
dc.subject.keywordPlus | OXIDE SEMICONDUCTOR | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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