ALD 장비의 Al2O3 공정 안정화를 위한 저온 트랩 장치의 특성 평가
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 권상직 | - |
dc.contributor.author | 서용혁 | - |
dc.contributor.author | 이원우 | - |
dc.contributor.author | 김인환 | - |
dc.contributor.author | 한지은 | - |
dc.contributor.author | 이연주 | - |
dc.contributor.author | 조재효 | - |
dc.contributor.author | 전용민 | - |
dc.contributor.author | 조의식 | - |
dc.date.accessioned | 2024-05-28T06:30:30Z | - |
dc.date.available | 2024-05-28T06:30:30Z | - |
dc.date.issued | 2024-03 | - |
dc.identifier.issn | 1738-2270 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/91356 | - |
dc.description.abstract | The application of the technology for forming Al2O3 thin films using ALD(atomic layer deposition) method is rapidly increasing in the semiconductor and display fields. In order to increase the efficiency of the ALD process in a mass production line, metallic by-products generated from the ALD process chamber must be effectively collected. By collecting by-products flowing out of the chamber with a cold trap device before they go to the vacuum pump, damage to the vacuum pump can be prevented and the work room can be maintained stably, resulting in increased process flow rate. In this study, a cold trap was installed between the ALD process chamber and the dry pump to measure and analyze by-products generated during the Al2O3 thin film deposition process. As a result, it was confirmed that Al and O elements were discharged, and the collection forms were two types: bulk and powder. And the binding energy peaked at 73.7 ~ 74.3 eV, the binding energy of Al 2p, and 530.7 eV, the binding energy of O 1s, indicating that the binding structure was Al-O. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | 한국반도체디스플레이기술학회 | - |
dc.title | ALD 장비의 Al2O3 공정 안정화를 위한 저온 트랩 장치의 특성 평가 | - |
dc.title.alternative | Characterizations of a Cold Trap System for the Process Stabilization of Al2O3 by ALD Equipment | - |
dc.type | Article | - |
dc.identifier.bibliographicCitation | 반도체디스플레이기술학회지, v.23, no.1, pp 92 - 96 | - |
dc.identifier.kciid | ART003068189 | - |
dc.description.isOpenAccess | N | - |
dc.citation.endPage | 96 | - |
dc.citation.startPage | 92 | - |
dc.citation.title | 반도체디스플레이기술학회지 | - |
dc.citation.volume | 23 | - |
dc.citation.number | 1 | - |
dc.publisher.location | 대한민국 | - |
dc.subject.keywordAuthor | Atomic Layer Depositon (ALD) | - |
dc.subject.keywordAuthor | Thin Film Encapsulation (TFE) | - |
dc.subject.keywordAuthor | Al2O3 | - |
dc.subject.keywordAuthor | Cold trap | - |
dc.subject.keywordAuthor | by-product | - |
dc.subject.keywordAuthor | Al-O | - |
dc.description.journalRegisteredClass | kci | - |
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