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Molecularly Reconfigurable Neuroplasticity of Layered Artificial Synapse Electronics

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dc.contributor.authorKumbhar, Dhananjay D.-
dc.contributor.authorJe, Yeonjin-
dc.contributor.authorHong, Seongin-
dc.contributor.authorLee, Donghyun-
dc.contributor.authorKim, Hyeongtae-
dc.contributor.authorKwon, Mi Ji-
dc.contributor.authorCho, Su-Yeon-
dc.contributor.authorLee, Do-Hyeon-
dc.contributor.authorLim, Dong-Hyeok-
dc.contributor.authorKim, Sunkook-
dc.contributor.authorPark, Jun Hong-
dc.date.accessioned2024-06-23T12:00:25Z-
dc.date.available2024-06-23T12:00:25Z-
dc.date.issued2024-05-
dc.identifier.issn1616-301X-
dc.identifier.issn1616-3028-
dc.identifier.urihttps://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/91633-
dc.description.abstractBrain-inspired electronics with multimodal signal processing have been investigated as the next-generation semiconductor platforms owing to the limitations of von Neumann architecture, which limits data processing and energy consumption efficiencies. This study demonstrates the molecular reconfiguration of plasticity of artificial synaptic devices with tunable electric conductance based on molecular dynamics at the channel surfaces for realizing chemical multimodality. Carrier transport dynamics are adjusted using the density of trapped carriers for the molecular adsorption of HS in the MoSe2 channel, and the results are consistent with the molecular simulations. In molecular dynamics-controlled devices, enhanced hysteresis enables the engineering of artificial neuroplasticity, mimicking the neurotransmitter release of biological synapses. Owing to the molecular reconfigurability of MoSe2 devices, the synaptic weights of excitatory and inhibitory synapse modes are significantly enhanced. Thus, this study can potentially contribute to the creation of the next generation of multimodal interfaces and artificial intelligence hardware realization.-
dc.language영어-
dc.language.isoENG-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.titleMolecularly Reconfigurable Neuroplasticity of Layered Artificial Synapse Electronics-
dc.typeArticle-
dc.identifier.wosid001157977300001-
dc.identifier.doi10.1002/adfm.202311994-
dc.identifier.bibliographicCitationADVANCED FUNCTIONAL MATERIALS, v.34, no.22-
dc.description.isOpenAccessN-
dc.identifier.scopusid2-s2.0-85184273082-
dc.citation.titleADVANCED FUNCTIONAL MATERIALS-
dc.citation.volume34-
dc.citation.number22-
dc.type.docTypeArticle-
dc.publisher.location독일-
dc.subject.keywordAuthorartificial synapses-
dc.subject.keywordAuthormolecular reconfiguration-
dc.subject.keywordAuthorMoSe2, neuroplasticity-
dc.subject.keywordAuthoroptoelectrical synapses-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusHYSTERESIS-
dc.subject.keywordPlusMOSE2-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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