Effect of the Sintering Temperature on the Structure and Properties of Fe-doped Bi3.25La0.75Ti2O12 Ceramics
- Authors
- Kim, Do Hyun; Han, Jun Young; Bark, Chung Wung
- Issue Date
- 2-Nov-2015
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- Sintering Temperature; Target; Thin film
- Citation
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.621, no.1, pp.129 - 135
- Journal Title
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS
- Volume
- 621
- Number
- 1
- Start Page
- 129
- End Page
- 135
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/9929
- DOI
- 10.1080/15421406.2015.1096447
- ISSN
- 1542-1406
- Abstract
- Recently, ferroelectric materials, such as La-substituted bismuth titanate (Bi3.25La0.75Ti3O12, BLT), have attracted interest for their potential applications in nano-electronics and nano-optoelectronics. On the other hand, the wide band gap of BLT has limited its opto-electronics applications. To solve this wide band gap problem in complex oxides, Fe doped BLT (Bi3.25La0.75FeTi2O12, Fe-BLT) could result in a dramatic decrease in the band gap without breaking its crystallographic symmetry. To fabricate the opto-electric devices, a bulk ceramic target was synthesized using Fe-BLT for thin film growth. To determine the optimal temperature, the pellets were sintered at different temperatures ranging from 700 degrees C-1100 degrees C for 2.5hours. This study found that Fe-BLT target can be sintered at 1000 degrees C without an impurity phase with comparable density and hardness to a target sintered at higher temperatures.
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