A study on room-temperature photoluminescence and crystallinity of RF-sputtered GaN for a cost-effective III-V-on-Si platform
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jeongmin | - |
dc.contributor.author | Kim, Hong-Seok | - |
dc.contributor.author | Han, Jae-Hee | - |
dc.contributor.author | Cho, Seongjae | - |
dc.date.available | 2020-02-28T07:43:58Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2015-11 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/9992 | - |
dc.description.abstract | Recently, Si technology has been searching for ways to develop Si-driven future electronics by overcoming the limitations in its electrical and optical properties through more Moore (MM), morethan- Moore (MtM), and beyond complementary metal-oxide-semiconductor (CMOS) approaches. Among the suggested strategies, III-V-on-Si heterogeneous integration can be a solution that allows the merger of III-V-based devices and Si CMOS logic blocks on Si monolithically and costeffectively. GaN has wide applicability owing to its high electron mobility and large energy bandgap for high-speed low-power transistors and visible light sources. In this work, the room-temperature photoluminescence (PL) characteristics and the crystallinity of GaN-on-Si were empirically studied. GaN was deposited by using RF sputtering on p-type Si substrates. The results show that the peak location near 520 nm does not vary with the wavelength of the excitation laser, which is strongly supported by the fact that the signals are not from higher-order harmonics but are genuinely from the prepared GaN. Further, a sharp peak is observed in the X-ray diffraction (XRD) analysis cooperatively performed with PL experiments. Consequently, partially-crystallized GaN has been obtained on Si by using conventional CMOS processing with a low thermal budget and high cost-effectiveness. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.title | A study on room-temperature photoluminescence and crystallinity of RF-sputtered GaN for a cost-effective III-V-on-Si platform | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000365751800021 | - |
dc.identifier.doi | 10.3938/jkps.67.1838 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.67, no.10, pp.1838 - 1843 | - |
dc.identifier.kciid | ART002049565 | - |
dc.identifier.scopusid | 2-s2.0-84948653112 | - |
dc.citation.endPage | 1843 | - |
dc.citation.startPage | 1838 | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 67 | - |
dc.citation.number | 10 | - |
dc.contributor.affiliatedAuthor | Lee, Jeongmin | - |
dc.contributor.affiliatedAuthor | Kim, Hong-Seok | - |
dc.contributor.affiliatedAuthor | Han, Jae-Hee | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Gallium nitride | - |
dc.subject.keywordAuthor | Photoluminescence | - |
dc.subject.keywordAuthor | GaN-on-Si | - |
dc.subject.keywordAuthor | RF sputtering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea(13120)031-750-5114
COPYRIGHT 2020 Gachon University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.