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High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium-Gallium Oxide Channel for Back- End-of-Line Compatible Transistor Applications: Cation Combinatorial ApproachGo to Link

허재석; 김민재; 윤성훈; Choi, Hagyoung; Park, Chi Kwon; Lee, Seung Hee; Cho, Min Hee; Kuh, Bong Jin; Jeong, Jae Kyeong

ArticleIssue Date2022CitationACS Applied Materials & Interfaces, v.14, no.43, pp 48857 - 48867PublisherAmerican Chemical Society
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