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Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric StackGo to Link

Cho, Min Hoe; Choi, Cheol Hee; Seul, Hyeon Joo; Cho, Hyun Cheol; Jeong, Jae Kyeong

ArticleIssue Date2021CitationACS APPLIED MATERIALS & INTERFACES, v.13, no.14, pp.16628 - 16640PublisherAMER CHEMICAL SOC
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