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Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitorGo to Link

Choi, Jae-Sung; Park, Jea-Gun

ArticleIssue Date2015CitationJournal of the Korean Physical Society, v.66, no.12, pp 1885 - 1888Publisher한국물리학회
SCISCIESCOPUS
Interface characterization of nitrogen plasma-treated gate oxide film formed by RTP technologyGo to Link

Choi, Jae-Sung; Park, Jae-Gun

ArticleIssue Date2014CitationSurface and Interface Analysis, v.46, pp 303 - 306PublisherJohn Wiley & Sons Inc.
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