Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor

Abstract

The electrical characteristics of a nanolaminated atomic layer deposition (ALD) HfAlO/InGaAs metal-oixde-semiconductor (MOS) capacitor with NH3 plasma passivation are investigated. Results show that the samples with NH3 plasma passivation exhibit better capacitance behavior with relatively small frequency dispersion in the inversion region than the unpassivated sample. The leakage current level of the NH3 plasma-passivated samples shows a much lower value compared to the unpassivated sample. The mid-gap value for the density of interface traps, D (it) , also shows that NH3 plasma-passivated samples have relatively low values compared to the unpassivated sample. Superior electrical performance, compared to the unpassivated sample, was demonstrated with NH3 plasma passivation through those electrical characterizations.