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Electrical properties of atomic layer deposited HfO2 gate dielectric film using D2O as oxidant for improved reliabilityGo to Link

Lee, Taeho; Ko, Han-Kyoung; Ahn, Jinho; Park, In-Sung; Sim, Hyunjun; Park, Hokyung; Hwang, Hyunsang

ArticleIssue Date2006CitationJapanese Journal of Applied Physics, v.45, no.9A, pp 6993 - 6995PublisherIOP Publishing Ltd
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