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Fabrication of n-type Schottky barrier thin-film transistor with channel length and width of 0.1 mu m and erbium silicide source/drainGo to Link

Yang, Jong-Heon; Ahn, Chang-Geun; Baek, In-Bok; Jang, Moon-Gyu; Sung, Gun Yong; Park, Byung-Chul; Im, Kiju; Lee, Seongjae

ArticleIssue Date2009CitationThin Solid Films, v.517, no.5, pp 1825 - 1828PublisherElsevier Sequoia
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