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Electrical Characteristics of Metal Oxide Based Multi-Layer Vertical Resistive Switching Memories Go to Link

Jang, Sung Hwan; Kim, Dong Hun; Yoon, Dong Yoel; Kim, Tae Whan

ArticleIssue Date2014CitationJournal of Nanoscience and Nanotechnology, v.14, no.11, pp 8201 - 8204PublisherAmerican Scientific Publishers

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Enhancement of electrical characteristics of the coupling ratio and the program/erase operation for NAND flash memories with an asymmetric interpoly-dielectric structure Go to Link

Ryu, Ju Tae; Jang, Sung Hwan; Kim, Tae Whan

ArticleIssue Date2014CitationJapanese Journal of Applied Physics, v.53, no.6, pp 1 - 3PublisherIOP Publishing Ltd

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Improvement of Resistive Random Access Memory Device Performance via Embedding of Low-K Dielectric Layer Go to Link

Jang, Sung Hwan; Ryu, Ju Tae; Jung, Hyun Soo; Kim, Tae Whan

ArticleIssue Date2016CitationJournal of Nanoscience and Nanotechnology, v.16, no.2, pp 1587 - 1591PublisherAmerican Scientific Publishers

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Retention Time Analysis in a 1T-DRAM With a Vertical Twin Gate and p(+)/i/n(+) Silicon Nanowire Go to Link

Jang, Sung Hwan; Kim, Tae Whan

ArticleIssue Date2022CitationIEEE Transactions on Electron Devices, v.69, no.9, pp 4909 - 4913PublisherInstitute of Electrical and Electronics Engineers

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Browsing by Jang, Sung HwanAuthor

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