Improvement of Resistive Random Access Memory Device Performance via Embedding of Low-K Dielectric Layer
- Authors
- Jang, Sung Hwan; Ryu, Ju Tae; Jung, Hyun Soo; Kim, Tae Whan
- Issue Date
- Feb-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Stochastic Simulation; Resistive Switching; Conductive Filament; Transition Metal Oxide; Low Reset Current; High Uniform Switching
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.2, pp.1587 - 1591
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 16
- Number
- 2
- Start Page
- 1587
- End Page
- 1591
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/24017
- DOI
- 10.1166/jnn.2016.11951
- ISSN
- 1533-4880
- Abstract
- The switching mechanisms of resistive random access memories (ReRAMs) were strongly related to the formation and rupture of conduction filaments (CFs) in the transition metal oxide (TMO) layer. The novel method approached to enhance the electrical characteristics of ReRAMs by introducing of the local insertion of the low-k dielectric layer inside the TMO layer. Simulation results showed that the insertion of the low-k dielectric layer in the TMO layer reduced the switching volume and the generation of CFs. The large variation of resistive switching properties was caused by the stochastic characteristics of the CFs, which was involved in switching by generation and rupture. The electrical characteristics of the novel ReRAMs exhibited a low reset current of below 20 mu A, the high uniformity of the resistive switching, and the narrow variation of the resistance for the high resistance state.
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