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Reliability improvement of Ge2Sb2Te5-based phase-change memory devices with increased post annealing timeGo to Link

Park, San; Park, Jisu; Kim, Sunbum; Park, Junwoo; Jung, Pilseong; Ji, Sanghyun; Choi, Changhwan

ArticleIssue Date2025CitationApplied Surface Science, v.702, pp 1 - 12PublisherElsevier BV
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