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Electronic parameter and subband structure variations due to an embedded aln potential barrier layer in Al0.3Ga0.7N/GaN heterostructuresGo to Link

Han, Sag Myung; Kim, SY; Choo, Dong Chu; Jung, Jaeil; Kim, Tae Whan; Yoo, Keon Ho; Jo, Yun Hwan; Jung, Myung Hee; Cho, Hye In; Lee, JH, et al.

ArticleIssue Date2007CitationSurface Review and Letters, v.14, no.4, pp 807 - 811PublisherWorld Scientific Publishing Co
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