Electronic parameter and subband structure variations due to an embedded aln potential barrier layer in Al0.3Ga0.7N/GaN heterostructures

Abstract

Carrier density of a two-dimensional electron gas (2DEG) in Al0.3Ga0.7N/GaN and Al0.3Ga0.7N/AlN/GaN heterostructures was investigated by performing Shubnikov-de Haas (SdH) measurements. The angular-dependent SdH measurements and the fast Fourier transformation results for the SdH data indicated 2DEG occupation of one subband in the triangular potential wells. The carrier densities of the 2DEGs in the Al0.3Ga0.7N/AlN/GaN and the Al0.3Ga0.7N/GaN heterostructures at 1.5K, determined from the SdH data, were 1.28 x 10(13) and 1.12 x 10(13) cm(-2), respectively. The electron carrier density of the 2DEG in the Al0.3Ga0.7N/GaN heterostructure with an AlN embedded potential barrier layer was larger than that in the Al0.3Ga0.7N/GaN heterostructure. The electronic subband energies, the wave functions, and the Fermi energies in the Al0.3Ga0.7N/AlN/GaN and Al0.3Ga0.7N/GaN heterostructures were calculated by using a self-consistent method taking into account spontaneous and piezoelectric polarizations.