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Electrical characteristics of ALD La2O3 capping layers using different lanthanum precursors in MOS devices with ALD HfO2, HfSiOx, and HfSiON gate dielectricsGo to Link

Lim, Donghwan; Jung, Woo Suk; Kim, Young Jin; Choi, Changhwan

ArticleIssue Date2015CitationMicroelectronic Engineering, v.147, pp 206 - 209PublisherElsevier BV
SCIESCOPUS
Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2Go to Link

Jung, Woo Suk; Lim, Donghwan; Han, Hoonhee; Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Choi, Changhwan

ArticleIssue Date2018CitationSOLID-STATE ELECTRONICS, v.149, pp.52 - 56PublisherPERGAMON-ELSEVIER SCIENCE LTD
SCIESCOPUS
Low Gate Leakage Current and Interface State Density of Atomic Layer Deposition Al2O3 SiC MOS Device with NH3 Plasma TreatmentGo to Link

Heo, Seung Chan; Jung, Woo Suk; Lim, Donghwan; Yoo, Gwangwe; Park, Jin-Hong; Choi, Changhwan

ArticleIssue Date2016CitationScience of Advanced Materials, v.8, no.9, pp 1866 - 1869PublisherAmerican Scientific Publishers
SCISCIESCOPUS
Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H-2 plasma passivation and post metallization annealingGo to Link

Heo, Seung Chan; Lim, Donghwan; Jung, Woo Suk; Choi, Rino; Yu, Hyun-Yong; Choi, Changhwan

ArticleIssue Date2015CitationMicroelectronic Engineering, v.147, pp 239 - 243PublisherElsevier BV
SCIESCOPUS
Synthesis of P-Type ZnO Thin Films with Arsenic Doping and Post AnnealingGo to Link

Chung, Chulwon; Kim, Young Jin; Han, Hoon Hee; Lim, Donghwan; Jung, Woo Suk; Choi, Moon Suk; Nam, Hyo-Jik; Son, Seok-Ki; Sergeevich, Andrey Sokolov; Park, Jin-Hong, et al.

ArticleIssue Date2016CitationScience of Advanced Materials, v.8, no.9, pp 1857 - 1860PublisherAmerican Scientific Publishers
SCISCIESCOPUS
The effects of (NH4)(2)S-x treatment on n-GaN MOS device with nano-laminated ALD HfAlOx and Ru gate stackGo to Link

Lim, Donghwan; Jung, Woo Suk; Choi, Moon Suk; Gil, Youngin; Choi, Changhwan

ArticleIssue Date2015CitationMicroelectronic Engineering, v.147, pp 210 - 214PublisherElsevier BV
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