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A Novel Structure for Improving Erase Performance of Vertical Channel NAND Flash With an Indium-Gallium-Zinc-Oxide ChannelGo to Link

Choi, Seonjun; Kim, Bongsueg; Jeong, Jae Kyeong; Song, Yun Heub

ArticleIssue Date2019CitationIEEE Transactions on Electron Devices, v.66, no.11, pp 4739 - 4744PublisherInstitute of Electrical and Electronics Engineers
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