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SCISCIESCOPUS
Carrier Transport Mechanisms of the Programming and Retention Characteristics for TaN-Al2O3-Si3N4-SiO2-Si Flash Memory DevicesGo to Link

Kim, Dong Hun; You, Joo Hyung; Lee, Dea Uk; Kim, Tae Whan; Lee, Keun Woo

ArticleIssue Date2012CitationJapanese Journal of Applied Physics, v.51, no.6, pp 1 - 5PublisherIOP Publishing Ltd
SCISCIESCOPUSKCI
Effect of the Si nanowire's diameter and doping profile on the electrical characteristics of gate-all-around twin Si-nanowire field-effect transistorsGo to Link

Kim, Dong Hun; Kim, Tae Whan

ArticleIssue Date2015CitationJournal of the Korean Physical Society, v.67, no.3, pp 502 - 506Publisher한국물리학회
SCOPUS
Effect of the trap density and distribution of the silicon nitride layer on the retention characteristics of charge trap flash memory devicesGo to Link

You, Joo Hyung; Kim, Hyun Woo; Kim, Dong Hun; Kim, Tae Whan; Lee, Keun Woo

ArticleIssue Date2011CitationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp.199 - 202PublisherIEEE
SCISCIESCOPUS
Electrical Characteristics of Metal Oxide Based Multi-Layer Vertical Resistive Switching MemoriesGo to Link

Jang, Sung Hwan; Kim, Dong Hun; Yoon, Dong Yoel; Kim, Tae Whan

ArticleIssue Date2014CitationJournal of Nanoscience and Nanotechnology, v.14, no.11, pp 8201 - 8204PublisherAmerican Scientific Publishers
SCISCIESCOPUSKCI
Electrical degradation mechanisms of nanoscale charge trap flash memories due to trapped charge in the oxide layerGo to Link

Koh, Kyoung Wook; Kim, Dong Hun; Ryu, Ju Tae; Kim, Tae Whan; Yoo, Keon-Ho

ArticleIssue Date2015CitationJournal of the Korean Physical Society, v.67, no.3, pp 533 - 536Publisher한국물리학회
SCIESCOPUS
Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling LayersGo to Link

Kim, Hyun Woo; Kim, Dong Hun; You, Joo Hyung; Kim, Tae Whan

ArticleIssue Date2010CitationIEICE Transactions on Electronics, v.E93C, no.5, pp 651 - 653PublisherOxford University Press
SCIESCOPUS
Microstructural properties and formation mechanisms of GaN nanorods grown on Al2O3 (0001) substratesGo to Link

Lee, Kyu Hyung; Lee, Jeong Yong; Kwon, Young Hae; Kang, Tae Won; Kim, Dong Hun; Lee, Dea Uk; Kim, Tae Whan

ArticleIssue Date2009CitationJournal of Materials Research, v.24, no.8, pp 2476 - 2482PublisherMaterials Research Society
SCISCIESCOPUS
Mobility Degradation Mechanisms of MOSFETs with a High-k Dielectric LayerGo to Link

Jung, Hyun Soo; Ryu, Ju Tae; Kim, Dong Hun; Kim, Tae Whan

ArticleIssue Date2014CitationJournal of Nanoscience and Nanotechnology, v.14, no.11, pp 8215 - 8218PublisherAmerican Scientific Publishers
SCIESCOPUS
Simulation of Nanoscale Two-Bit Not-And-type Silicon-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory Devices with a Separated Double-Gate Fin Field Effect Transistor Structure Containing Different Tunneling Oxide ThicknessesGo to Link

Oh, Se Woong; Park, Sang Su; Kim, Dong Hun; Kim, Hyun Woo; Kim, Tate Whan

ArticleIssue Date2009CitationJapanese Journal of Applied Physics, v.48, no.6, pp 1 - 4PublisherIOP Publishing Ltd
SCIESCOPUS
The creation of sub-10 nm In(PO3)(3) nanocrystals in an insulating matrix, and underlying formation mechanismsGo to Link

Yuk, Jong Min; Kim, Tae Whan; Lee, Jeong Yong; No, Young Soo; Kim, Dong Hun; Choi, Won Kook; Jin, Sungho

ArticleIssue Date2009CitationNanotechnology, v.20, no.5, pp 1 - 4PublisherInstitute of Physics Publishing
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