Electrical degradation mechanisms of nanoscale charge trap flash memories due to trapped charge in the oxide layer
- Authors
- Koh, Kyoung Wook; Kim, Dong Hun; Ryu, Ju Tae; Kim, Tae Whan; Yoo, Keon-Ho
- Issue Date
- Aug-2015
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- SONOS; Fixed charge; Threshold voltage shift; CTF degradation; RTN
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.67, no.3, pp.533 - 536
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 67
- Number
- 3
- Start Page
- 533
- End Page
- 536
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/156665
- DOI
- 10.3938/jkps.67.533
- ISSN
- 0374-4884
- Abstract
- The deterioration of the electrical characteristics of charge trap flash (CTF) memories with a silicon-oxide-nitride-oxide-silicon (SONOS) structure due to the charge traps in the oxide layers attributed to the random trapping and detrapping processes was investigated. Simulation results for the CTF memories showed that the threshold voltage shift was decreased by the charge trapped in the oxide layers in the SONOS structure and that the charge trapped in the blocking oxide had more significant effects than that trapped in the tunneling oxide. The degradation effects of the charge trapped in the blocking oxide on the electrical characteristics of the CTF memories were clarified by examining the vertical electric field in the device.
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