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Fermi-Level Unpinning Technique with Excellent Thermal Stability. for n-Type GermaniumGo to Link

Kim, Gwang-Sik; Kim, Seung-Hwan; Lee, Tae In; Cho, Byung Jin; Choi, Changhwan; Shin, Changhwan; Shim, Joon Hyung; Kim, Jiyoung; Yu, Hyun-Yong

ArticleIssue Date2017CitationACS Applied Materials & Interfaces, v.9, no.41, pp 35988 - 35997PublisherAmerican Chemical Society
SCISCIESCOPUS
Fermi-Level Unpinning Using a Ge-Passivated Metal-Interlayer-Semiconductor Structure for Non-Alloyed Ohmic Contact of High-Electron-Mobility TransistorsGo to Link

Kim, Seung-Hwan; Kim, Gwang-Sik; Kim, Jeong-Kyu; Park, Jin-Hong; Shin, Changhwan; Choi, Changhwan; Yu, Hyun-Yong

ArticleIssue Date2015CitationIEEE Electron Device Letters, v.36, no.9, pp 884 - 886PublisherInstitute of Electrical and Electronics Engineers
SCISCIESCOPUS
Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF6 Plasma TreatmentGo to Link

Kim, Seung-Hwan; Kim, Gwang-Sik; Kim, Sun-Woo; Kim, Jeong-Kyu; Choi, Changhwan; Park, Jin-Hong; Choi, Rino; Yu, Hyun-Yong

ArticleIssue Date2016CitationIEEE Electron Device Letters, v.37, no.4, pp 373 - 376PublisherInstitute of Electrical and Electronics Engineers
SCISCIESCOPUS
The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity ReductionGo to Link

Kim, Sun-Woo; Kirn, Seung-Hwan; Kim, Gwang-Sik; Choi, Changhwan; Choi, Rino; Yu, Hyun-Yong

ArticleIssue Date2016CitationACS Applied Materials & Interfaces, v.8, no.51, pp 35614 - 35620PublisherAmerican Chemical Society
SCISCIESCOPUS
The Effect of Post-Fabrication Annealing on an Amorphous IGZO Visible-Light PhotodetectorGo to Link

Park, Yongkook; Park, Hyung-Youl; Kang, Dong-Ho; Kim, Gwang-Sik; Lim, Donghwan; Yu, Hyun-Yong; Choi, Changhwan; Park, Jin-Hong

ArticleIssue Date2016CitationJournal of Nanoscience and Nanotechnology, v.16, no.11, pp 11745 - 11749PublisherAmerican Scientific Publishers
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