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Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) DevicesGo to Link

Kim, Su-Dong; Ahn, Hyung-Woo; Shin, Sang Yeol; Jeong, Doo Seok; Son, Seo Hee; Lee, Hosun; Cheong, Byung-ki; Shin, Dong Wook; Lee, Suyoun

ArticleIssue Date2013CitationECS Solid State Letters, v.2, no.10, pp Q75 - Q77PublisherThe Electrochemical Society
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