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Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices
- Authors
- Kim, Su-Dong; Ahn, Hyung-Woo; Shin, Sang Yeol; Jeong, Doo Seok; Son, Seo Hee; Lee, Hosun; Cheong, Byung-ki; Shin, Dong Wook; Lee, Suyoun
- Issue Date
- Jan-2013
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ECS SOLID STATE LETTERS, v.2, no.10, pp.Q75 - Q77
- Indexed
- SCIE
SCOPUS
- Journal Title
- ECS SOLID STATE LETTERS
- Volume
- 2
- Number
- 10
- Start Page
- Q75
- End Page
- Q77
- ISSN
- 2162-8742
- Abstract
- We studied GexSe1-x for the potential application in the Ovonic Threshold Switching (OTS) device. We found that, as Ge concentration increased, the thermal stability was deteriorated while the device performances were improved. In addition, using Spectroscopic Ellipsometry (SE) technique, the energy gap (E-g) and the Urbach energy (E-U) were found to show non- monotonic dependences, with their minimum of about 1.0 eV of E-g for Ge0.6Se0.4 and 40 meV of E-U for Ge0.5Se0.5. These changes are consistent with the changes in device characteristics, which might be explained in terms of the change in the number of Se-Se bondings.
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Related Researcher
- Jeong, Doo Seok
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)