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Ultrathin-Mo-Enabled NC-NAND with Sub-3.5nm HZO for Scalable High-MW OperationGo to Link

Lee, Sangho; Kim, Yongsu; Jung, Yangjin; Chang, Seungyeon; Shin, Seokjoong; Kim, Giuk; Joh, Hongrae; Kim, Woongin; Park, Sanghyun; Seo, Kwangyou, et al.

ArticleIssue Date2026Citation2025 IEEE International Electron Devices Meeting (IEDM), pp 1 - 4PublisherInstitute of Electrical and Electronics Engineers Inc.
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