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Browsing by Kwag, Jae-HyeokAuthor

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c-Axis Aligned 3 nm Thick In2O3 Crystal Using New Liquid DBADMIn Precursor for Highly Scaled FET Beyond the Mobility-Stability Trade-off

Choi, Su-Hwan; Ryu, Seong-Hwan; Kim, Dong-Gyu; Kwag, Jae-Hyeok; Yeon, Changbong; Jung, Jaesun; Park, Young-Soo; Park, Jin-Seong

ArticleIssue Date2024CitationNano Letters, v.24, no.4, pp 1324 - 1331PublisherAmerican Chemical Society
SCIESCOPUS
High-Temperature-Stable Polycrystalline ALD-InGaO Channels Enabled by Buffer-Layer EngineeringGo to Link

Kim, Dong-Gyu; Oh, Hye-Jin; Cho, Tae Woong; Kwag, Jae-Hyeok; Hur, Jaeseok; Choi, Sunghyun; Park, Kwangmin; Park, Jin-Seong

ArticleIssue Date2026CitationACS APPLIED ELECTRONIC MATERIALS, v.8, no.7, pp 3175 - 3186PublisherAMER CHEMICAL SOC
SCIESCOPUS
Impact of hydrogen-controlled thermal ALD SiO2 insulators on IGZO channel FETs to optimize the electrical performanceGo to Linkopen access

Choi, Su-Hwan; Kim, Dong-Gyu; Kwag, Jae-Hyeok; Song, Ki-Cheol; Lee, Yeonhee; Park, Chang-Kyun; Park, Jin-Seong

ArticleIssue Date2025CitationJournal of Materials Chemistry C, v.13, no.12, pp 6215 - 6223PublisherRoyal Society of Chemistry
SCIESCOPUS
Reduction of trap density in high-k dielectrics through optimized ALD process and high-pressure deuterium annealing

Hwang, Taewon; Choi, Su-Hwan; Song, Ki-Cheol; Lee, Yeonhee; Kwag, Jae-Hyeok; Lee, Jun-Yeoub; Park, Chang-Kyun; Park, Jin-Seong

ArticleIssue Date2025CitationMaterials Science in Semiconductor Processing, v.191, pp 1 - 8PublisherPergamon Press
SCIESCOPUS
Tailoring the number of lines for IGO-channel 2T0C DRAM comparable to conventional 2-line operation 1T1C structure for highly scaled cell volumeGo to Linkopen access

Kwag, Jae-Hyeok; Choi, Su-Hwan; Kim, Daejung; Lee, Jun-Yeoub; Hwang, Taewon; Oh, Hye-Jin; Park, Chang-Kyun; Park, Jin-Seong

ArticleIssue Date2025CitationInternational Journal of Extreme Manufacturing, v.7, no.5, pp 1 - 11PublisherIOP Publishing
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