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Showing results 1 to 2 of 2
SCIE
SCOPUS
Bulk and interface trap generation under negative bias temperature instability stress of p-channel metal-oxide-semiconductor field-effect transistors with nitrogen and silicon incorporated HfO2 gate dielectrics
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Choi, Changhwan
; Lee, Jack C.
Article
Issue Date
2011
Citation
APPLIED PHYSICS LETTERS, v.98, no.6, pp.1 - 4
Publisher
AMER INST PHYSICS
SCIE
SCOPUS
Scaling equivalent oxide thickness with flat band voltage (V-FB) modulation using in situ Ti and Hf interposed in a metal/high-k gate stack
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Choi, Changhwan
; Lee, Jack C.
Article
Issue Date
2010
Citation
JOURNAL OF APPLIED PHYSICS, v.108, no.6, pp.1 - 4
Publisher
AMER INST PHYSICS
1
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