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Indium-tin-oxide, free, flexible, nonvolatile memory devices based on graphene quantum dots sandwiched between polymethylsilsesquioxane layers Go to Link

Ooi, Poh Choon; Lin, Jian; Kim, Tae Whan; Li, Fushan

ArticleIssue Date2016CitationOrganic Electronics, v.32, pp 115 - 119PublisherElsevier BV

SCISCIESCOPUS

Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers Go to Link

Lin, Jian; Ooi, Poh Choon; Li, Fushan; Guo, Tailiang; Kim, Tae Whan

ArticleIssue Date2015CitationIEEE Electron Device Letters, v.36, no.11, pp 1212 - 1214PublisherInstitute of Electrical and Electronics Engineers

SCISCIESCOPUS

Tristable switching of the electrical conductivity through graphene quantum dots sandwiched in multi-stacked poly(methyl methacrylate) layers Go to Link

Ooi, Poh Choon; Lin, Jian; Kim, Tae Whan; Li, Fushan

ArticleIssue Date2016CitationOrganic Electronics, v.38, pp 379 - 383PublisherElsevier BV

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Browsing by Lin, JianAuthor

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