Tristable switching of the electrical conductivity through graphene quantum dots sandwiched in multi-stacked poly(methyl methacrylate) layers
- Authors
- Ooi, Poh Choon; Lin, Jian; Kim, Tae Whan; Li, Fushan
- Issue Date
- Nov-2016
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Tristable switching; Graphene quantum dot; Poly(methyl methacrylate); Electrical characteristic; Filament; Conduction mechanisms
- Citation
- ORGANIC ELECTRONICS, v.38, pp.379 - 383
- Indexed
- SCIE
SCOPUS
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 38
- Start Page
- 379
- End Page
- 383
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/21412
- DOI
- 10.1016/j.orgel.2016.09.010
- ISSN
- 1566-1199
- Abstract
- Tristable switching nonvolatile memory (NVM) devices based on graphene quantum dots (GQDs) sandwiched between multi-stacked poly (methyl methacrylate) (PMMA) layers were fabricated on indium-tin-oxide (ITO)-coated glass substrates by using a solution-processed method. Current-voltage (I-V) curves at 300 K for the silver nanowire/PMMA/GQD/PMMA/GQD/PMMA/ITO/glass devices showed tristable switching currents with high-resistance, intermediate-resistance, and low-resistance states. The device's cycling endurance of the three resistance states remained stable with a distinguishable value for each resistance state over 1000 cycles, and the obtained retention results showed well-distinguished resistance states without degradation for up to 1 x 10(4) s. Schottky emission, Poole-Frenkel emission, trapped-charge limited-current, and ohmic conduction were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I-V characteristics. The described energy-band diagrams confirm the proposed conduction band mechanisms.
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