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Engineering Negative Capacitance in Hf0.5Zr0.5O2 for Low-Power and Reliable Charge Trap Flash MemoryGo to Link

Nam, Yunseok; Lee, Sangho; Jung, Yangjin; Kim, Kang; Ok, Jihye; Ha, Jinwook; Yoon, Heemin; Shin, Mincheol; Park, Sang-Hee Ko; Ahn, Jinho, et al.

ArticleIssue Date2026CitationACS APPLIED MATERIALS & INTERFACES, v.18, no.1, pp 3065 - 3073PublisherAMER CHEMICAL SOC
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