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A solution-processed silicon oxide gate dielectric prepared at a low temperature via ultraviolet irradiation for metal oxide transistors

Seul, Hyeon Joo; Kim, Hyun-Gwan; Park, Man-Young; Jeong, Jae Kyeong

ArticleIssue Date2016CitationJournal of Materials Chemistry C, v.4, no.44, pp 10486 - 10493PublisherRoyal Society of Chemistry
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Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric StackGo to Link

Cho, Min Hoe; Choi, Cheol Hee; Seul, Hyeon Joo; Cho, Hyun Cheol; Jeong, Jae Kyeong

ArticleIssue Date2021CitationACS APPLIED MATERIALS & INTERFACES, v.13, no.14, pp.16628 - 16640PublisherAMER CHEMICAL SOC
SCOPUS
Design of Atomic Layer Deposited Oxide Channel Transistor for High-Performance, High-Pixel Density AMOLEDGo to Link

Hur, Jae Seok; Cho, Min Hoe; Seul, Hyeon Joo; Jeong, Jae Kyeong

ArticleIssue Date2022CitationProceedings of the International Display Workshops, v.29, pp 1051 - 1054
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