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In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND beyond 1K Layers: Experimental Demonstration and ModelingGo to Link

Kim, Giuk; Choi, Hyojun; Shin, Hunbeom; Lee, Sangho; Lee, Sangmok; Nam, Yunseok; Jung, Minhyun; Myeong, Ilho; Kim, Kijoon; Woo, Jongho, et al.

ArticleIssue Date2024CitationDigest of Technical Papers - Symposium on VLSI Technology, pp 1 - 2
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Oxide Channel Ferroelectric NAND Device with Source-tied Covering Metal Structure: Wide Memory Window (14.3 V), Reliable Retention (> 10 years) and Disturbance Immunity (ΔVth ≤ 0.1 V) for QLC OperationGo to Link

Joh, Hongrae; Kim, Giuk; Ock, Jihye; Kim, Seungyeob; Lee, Sangmok; Lee, Sangho; Kim, Kwangsoo; Lim, Suhwan; Woo, Jongho; Kim, Wanki, et al.

ArticleIssue Date2025CitationTechnical Digest - International Electron Devices Meeting, pp 1 - 4
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The Opportunity of Anti-ferroelectrics in FeFET for Emerging Non-Volatile Memory ApplicationsGo to Link

Choi, Hyojun; Kim, Giuk; Shin, Hunbeom; Nam, Yunseok; Jeon, Sanghun; Kim, Kwangsoo; Lim, Suhwan; Woo, Jongho; Kim, Wanki; Ha, Daewon, et al.

ArticleIssue Date2025CitationIEEE International Reliability Physics Symposium Proceedings, pp 1 - 6
SCOPUS
Unveiling the Origin of Disturbance in FeFET and the Potential of Multifunctional TiO2 as a Breakthrough for Disturb-free 3D NAND Cell: Experimental and ModelingGo to Link

Kim, Giuk; Kang, Hyunjun; Lee, Sangho; Choi, Hyojun; Jung, Yangjin; Shin, Mincheol; Kim, Kwangsoo; Lim, Suhwan; Woo, Jongho; Kim, Wanki, et al.

ArticleIssue Date2025CitationTechnical Digest - International Electron Devices Meeting, pp 1 - 4
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