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High-temperature interfacial stability of In2O3 FETs with SiO2 versus Al2O3 insulators enabling 3 nm channel scalingGo to Link

Oh, Hye-Jin; Lee, Jun-Yeoub; Beom, Jun Young; Sun, Ji Eun; Lee, Chi-Hoon; Park, Chang-Kyun; Kim, Duho; Kim, Minhyuk; Lee, Junseok; Cho, Seunghyun, et al.

ArticleIssue Date2026CitationApplied Surface Science, v.730, pp 1 - 6PublisherElsevier B.V.
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