Atomic layer chemical vapor deposition of SiO2 thin films using a chlorine-free silicon precursor for 3D NAND applications
DC Field | Value | Language |
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dc.contributor.author | Baek, GeonHo | - |
dc.contributor.author | Baek, Ji-hoon | - |
dc.contributor.author | Kim, Hye-mi | - |
dc.contributor.author | Lee, Seunghwan | - |
dc.contributor.author | Jin, Yusung | - |
dc.contributor.author | Park, Hyung Soon | - |
dc.contributor.author | Kil, Deok-Sin | - |
dc.contributor.author | Kim, Sangho | - |
dc.contributor.author | Park, Yongjoo | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2021-07-30T04:43:05Z | - |
dc.date.available | 2021-07-30T04:43:05Z | - |
dc.date.created | 2021-07-14 | - |
dc.date.issued | 2021-07 | - |
dc.identifier.issn | 0272-8842 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1003 | - |
dc.description.abstract | Atomic layer deposition and atomic layer chemical vapor deposition (ALD, ALCVD) of SiO2 films were investigated over a wide range of high temperatures (from 525 degrees C to 700 degrees C) using chlorine-free amino silane as the Si precursor and O-3 as the oxygen reactant. The ALD window occurred at 550-600 degrees C. The growth per cycle (GPC) of the SiO2 films was about 1.14-1.58 angstrom/cycle for deposition temperatures between 525 and 700 degrees C. There were no chlorine impurities detected in any of the deposited ALCVD films. Above a deposition temperature of 750 degrees C, the SiO2 films exhibited conventional chemical vapor deposition (CVD) behavior due to precursor decomposition, as evidenced by high GPC (5.51 angstrom/cycle) and a significant impurity content (carbon 0.2 at% and nitrogen 0.4 at%). The SiO2 films had high film density (2.3 g/cm(3)), minimal roughness (rms similar to 0.16 nm). In addition, the wet etch rate (WER) of the SiO2 films decreased from 3.0 to 2.1 nm/min. The ALD SiO2 film at 600 degrees C exhibited excellent electrical performance, such as a leakage current density of 5.03 x 10(-9) A/cm(2) (at 3 MV/cm) and a breakdown field of 10.3 MV/cm. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.title | Atomic layer chemical vapor deposition of SiO2 thin films using a chlorine-free silicon precursor for 3D NAND applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1016/j.ceramint.2021.03.249 | - |
dc.identifier.scopusid | 2-s2.0-85103520724 | - |
dc.identifier.wosid | 000656535100001 | - |
dc.identifier.bibliographicCitation | CERAMICS INTERNATIONAL, v.47, no.13, pp.19036 - 19042 | - |
dc.relation.isPartOf | CERAMICS INTERNATIONAL | - |
dc.citation.title | CERAMICS INTERNATIONAL | - |
dc.citation.volume | 47 | - |
dc.citation.number | 13 | - |
dc.citation.startPage | 19036 | - |
dc.citation.endPage | 19042 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.subject.keywordPlus | SIO2-FILMS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | SICL4 | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | H2O | - |
dc.subject.keywordAuthor | Cl-free Si precursor | - |
dc.subject.keywordAuthor | High-temperature process | - |
dc.subject.keywordAuthor | Thermal atomic layer deposition | - |
dc.subject.keywordAuthor | 3D NAND flash memory | - |
dc.subject.keywordAuthor | Tunneling oxide layer | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S027288422100938X?via%3Dihub | - |
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