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The Electrical Performance Difference of TFTs Using SiOx Gate Insulator Deposited by PECVD and PEALD with DIPAS Precursor
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박진성 | - |
| dc.date.accessioned | 2021-08-02T09:31:39Z | - |
| dc.date.available | 2021-08-02T09:31:39Z | - |
| dc.date.issued | 2020-02-04 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/10326 | - |
| dc.title | The Electrical Performance Difference of TFTs Using SiOx Gate Insulator Deposited by PECVD and PEALD with DIPAS Precursor | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | The 27th Korean Conference on Semiconductors (KCS 2020) | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)