Dislocation sink annihilating threading dislocations in strain-relaxed Si1-xGex layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Sam-Jong | - |
dc.contributor.author | Kim, Il-Hwan | - |
dc.contributor.author | Park, Jun-Seong | - |
dc.contributor.author | Shim, Tae-Hun | - |
dc.contributor.author | Park, Jea Gun | - |
dc.date.accessioned | 2021-08-02T09:52:25Z | - |
dc.date.available | 2021-08-02T09:52:25Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2020-03 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/10663 | - |
dc.description.abstract | We proposed a dislocation sink technology for achieving Si1-xGex multi-bridge-channel field-effect-transistor beyond 5 nm transistor design-rule that essentially needs an almost crystalline-defect-free Si1-xGex channel. A generation of a dislocation sink via H+ implantations in a strain-relaxed Si0.7Ge0.3 layer grown on a Si substrate and a following annealing almost annihilate completely misfit and threading dislocations located near the interface between a relaxed Si0.7Ge0.3 layer and a Si substrate. A real-time (continuous heating from room temperature to 600 degrees C) in situ high-resolution-transmission-electron-microscopy and inverse-fast-Fourier-transform image observation at 1.25 MV acceleration voltage obviously demonstrated the annihilation process between dislocation sinks and remaining misfit and threading dislocations during a thermal annealing, called the [Si-I or Ge-I +V-Si or V-Ge -> Si1-xGex] annihilation process, where Si-I, Ge-I, V-Si, and V-Ge are interstitial Si, interstitial Ge, Si vacancy, and Ge vacancy, respectively. In particular, the annihilation process efficiency greatly depended on the dose of H+ implantation and annealing temperature; i.e. a maximum annihilation process efficiency achieved at 5 x 10(15) atoms cm(-2) and 800 degrees C. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Dislocation sink annihilating threading dislocations in strain-relaxed Si1-xGex layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea Gun | - |
dc.identifier.doi | 10.1088/1361-6528/ab58ab | - |
dc.identifier.scopusid | 2-s2.0-85077761651 | - |
dc.identifier.wosid | 000514706900001 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.31, no.12, pp.1 - 7 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 31 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GE CONCENTRATION | - |
dc.subject.keywordPlus | RELAXATION | - |
dc.subject.keywordAuthor | SiGe | - |
dc.subject.keywordAuthor | dislocation | - |
dc.subject.keywordAuthor | hydrogen ion implantation | - |
dc.subject.keywordAuthor | annihilation process | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/1361-6528/ab58ab | - |
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