Enhancement of gas sensing by implantation of Sb-ions in SnO2 nanowires
- Authors
- Kim, Jae-Hun; Mirzaei, Ali; Kim, Jin-Young; Lee, Jae-Hyoung; Kim, Hyoun Woo; Hishita, Shunich; Kim, Sang Sub
- Issue Date
- Feb-2020
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Sb-implantation; SnO2 nanowire; Gas sensor; NO2; Sensing mechanism
- Citation
- SENSORS AND ACTUATORS B-CHEMICAL, v.304, pp.1 - 10
- Indexed
- SCIE
SCOPUS
- Journal Title
- SENSORS AND ACTUATORS B-CHEMICAL
- Volume
- 304
- Start Page
- 1
- End Page
- 10
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/10735
- DOI
- 10.1016/j.snb.2019.127307
- Abstract
- We describe gas sensing improvements of SnO2 nanowire (NW) gas sensors by Sb-ion implantation. SnO2 NWs were grown through a vapor-liquid-solid growth technique and Sb-ion implantation was performed by an ion implanter at different doses of 2x10(13), 2x10(14), and 2x10(15) ion/cm(2). The morphology and chemical compositions were confirmed by different characterization techniques. Gas sensing results demonstrated the gas sensing improvement by Sb-implantation, where the lowest dose gas sensor showed the best performance towards tested gases. However, high doses led to a reduced sensing response. We suggested the related sensing mechanism based not only on change of electron concentration by substituting Sn4+ ions to Sb+5 ions, but also on generation of surface defects. This study can open new possibilities to use ion-implantation as promising way to enhance the sensing capability of different gas sensors.
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