Extremely high photoconductivity ultraviolet-light sensor using amorphous In-Ga-Zn-O thin-film-transistor
DC Field | Value | Language |
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dc.contributor.author | Park, Jin-Seong | - |
dc.contributor.author | Seo, Hyung-Tak | - |
dc.contributor.author | Park, Jea-Gun | - |
dc.date.accessioned | 2021-07-30T04:43:35Z | - |
dc.date.available | 2021-07-30T04:43:35Z | - |
dc.date.created | 2021-07-14 | - |
dc.date.issued | 2021-06 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1091 | - |
dc.description.abstract | An amorphous (alpha) indium-gallium-zinc-oxide (IGZO) thin-film-transistor (TFT) was developed as a precise ultraviolet-light (UV-light) sensor, which is extremely sensitive to photoconductivity. A higher absorption of UV-light via a longer UV-light irradiation time and a higher UV-light intensity shifted the threshold voltage (V-th) to a negatively higher voltage and then saturated above a specific UV-light irradiation time. Particularly, the photoconductivity (i.e., V-th) shifts were evidently dependent on the oxygen vacancy (V-O)-induced defect density of an ALD alpha-IGZO channel; in turn, a higher V-O-induced defect density led to a higher photoconductivity shift. Additionally, the V-th saturation time in an ALD alpha-IGZO TFT decreased rapidly with increasing UV-light intensity; in particular, a higher V-O-induced defect density presented a smaller decay constant of the V-th saturation time. Furthermore, the V-th after stopping the UV-light irradiation was rapidly recovered to the condition as without UV-light irradiation condition and a higher V-O-induced defect density exhibited a longer recovery time. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Extremely high photoconductivity ultraviolet-light sensor using amorphous In-Ga-Zn-O thin-film-transistor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.identifier.doi | 10.1007/s40042-021-00205-z | - |
dc.identifier.scopusid | 2-s2.0-85106732463 | - |
dc.identifier.wosid | 000655888600003 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.78, no.12, pp.1221 - 1226 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 78 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 1221 | - |
dc.citation.endPage | 1226 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002724657 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordAuthor | IGZO | - |
dc.subject.keywordAuthor | TFT | - |
dc.subject.keywordAuthor | UV sensor | - |
dc.subject.keywordAuthor | ALD | - |
dc.subject.keywordAuthor | Photoconductivity | - |
dc.identifier.url | https://link.springer.com/article/10.1007/s40042-021-00205-z | - |
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