Porous Si/SnO2 nanowires heterostructures for H2S gas sensing
- Authors
- Bang, Jae Hoon; Choi, Myung Sik; Mirzaei, Ali; Oum, Wansik; Han, Seungmin; Kim, Sang Sub; Kim, Hyoun Woo
- Issue Date
- Jan-2020
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Porous Si; SnO2 NWs; H2S gas; Gas sensor; Sensing mechanism
- Citation
- CERAMICS INTERNATIONAL, v.46, no.1, pp.604 - 611
- Indexed
- SCIE
SCOPUS
- Journal Title
- CERAMICS INTERNATIONAL
- Volume
- 46
- Number
- 1
- Start Page
- 604
- End Page
- 611
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/11419
- DOI
- 10.1016/j.ceramint.2019.09.010
- ISSN
- 0272-8842
- Abstract
- IIn this work, a low-temperature (100 degrees C) gas sensor based on heterojunctions of porous Si and SnO2 nanowires (NWs) is presented. Porous Si was obtained from p-Si wafers by electrochemical etching, and SnO2 NWs were fabricated by a vapor-liquid-solid route. Different characterization techniques were used to verify the formation of porous Si/SnO2 NW heterojunctions. H2S gas sensing results showed enhanced gas sensing performance of the porous Si/SnO2 NW sensor in comparison with that of a porous Si sensor. The reasons for such enhancement are discussed in detail. This study demonstrates the promising effects of SnO2 NWs in combination with porous Si to realize low-temperature H2S gas sensors that are highly compatible with existing Si processing technology.
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