Enhanced Carrier Transport in Strongly Coupled, Epitaxially Fused CdSe Nanocrystal Solids
- Authors
- Zhao, Qinghua; Gouget, Guillaume; Guo, Jiacen; Yang, Shengsong; Zhao, Tianshuo; Straus, Daniel B.; Qian, Chengyang; Oh, Nu ri; Wang, Han; Murray, Christopher B.; Kagan, Cherie R.
- Issue Date
- Apr-2021
- Publisher
- AMER CHEMICAL SOC
- Keywords
- nanocrystal solidelectronic couplingcharge transportepitaxially fusedtransistorcation exchange
- Citation
- NANO LETTERS, v.21, no.7, pp.3318 - 3324
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANO LETTERS
- Volume
- 21
- Number
- 7
- Start Page
- 3318
- End Page
- 3324
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1232
- DOI
- 10.1021/acs.nanolett.1c00860
- ISSN
- 1530-6984
- Abstract
- Strongly coupled, epitaxially fused colloidal nanocrystal (NC) solids are promising solution-processable semiconductors to realize optoelectronic devices with high carrier mobilities. Here, we demonstrate sequential, solid-state cation exchange reactions to transform epitaxially connected PbSe NC thin films into Cu2Se nanostructured thin-film intermediates and then successfully to achieve zinc-blende, CdSe NC solids with wide epitaxial necking along {100} facets. Transient photoconductivity measurements probe carrier transport at nanometer length scales and show a photoconductance of 0.28(1) cm(2) V-1 s(-1), the highest among CdSe NC solids reported. Atomic-layer deposition of a thin Al2O3 layer infiltrates and protects the structure from fusing into a polycrystalline thin film during annealing and further improves the photoconductance to 1.71(5) cm(2) V-1 s(-1) and the diffusion length to 760 nm. We fabricate field-effect transistors to study carrier transport at micron length scales and realize high electron mobilities of 35(3) cm(2) V-1 s(-1) with on-off ratios of 10(6) after doping.
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